II‐VI Incorporated (NASDAQ:IIVI), a leading provider of compound semiconductor solutions, today announced a strategic collaboration with Sumitomo Electric Device Innovations, Inc., (SEDI) a subsidiary of Sumitomo Electric Industries, Ltd. (TYO:5802), to establish a vertically integrated, 150 mm wafer fabrication  platform to manufacture state-of-the-art gallium nitride (GaN) on silicon carbide (SiC) HEMT devices that will enable next generation wireless networks.

The race to deploy next-generation broadband wireless services is driving the development of scalable strategic supply chains with key enabling technologies.  II-VI’s leadership in 150 mm compound semiconductor manufacturing combined with SEDI’s leadership in GaN RF device technology will allow the parties to drive best-in-class performance, greater scale and competitive costs for 5G RF solutions.

“II-VI has invested aggressively to establish a world-class 150 mm compound semiconductor manufacturing platform,” said Keiichi Imamura, Corporate Director, Sumitomo Electric Device Innovations, Inc. “Based on rapidly growing market opportunities, it was important to act now to evolve our long standing commercial relationship into a full strategic relationship. We will leverage II-VI’s manufacturing platform to achieve economies of scale to enable us to meet the upcoming global demand for gallium nitride on silicon carbide HEMT devices.”

“We are excited to collaborate with SEDI, the market leader in high-performance gallium nitride HEMT products for wireless communications.  This collaboration establishes a differentiated, vertically integrated value chain solution that spans from substrates through RF modules,” said Dr. Chuck Mattera, President and CEO, II-VI Incorporated. “Coupling SEDI’s industry-leading HEMT device technology with our 150 mm manufacturing platform will accelerate both companies’ wide-bandgap RF product roadmaps, as well as secure a leading technology and market position for many years to come. To be ready for the mass production ramps, we are preparing a 150 mm semi-insulating substrate manufacturing platform and expanding our Warren, NJ Device fab to add these core technologies to our growing optoelectronic device fab capability.

II-VI serves the rapidly growing markets for wide-bandgap materials from its facilities in Pinebrook, NJ and Champaign, IL. The 150 mm production facility in Warren, NJ is expected to be qualified for GaN-on-SiC HEMT production in mid-calendar year 2020.  

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