II-VI manufactures and markets high quality single crystal SiC substrates for use in the wireless infrastructure, RF electronics and power switching industries. We continually make significant investments in research and development that ensure our crystal growth technology and wafer manufacturing practices remain state of the art, and support our commitment to become the world’s leading supplier of high performance, high quality SiC and other wide bandgap materials. II-VI now produces and ships wafers from two world-class, ISO 9001 certified SiC wafer production facilities, one in Pine Brook, NJ, and the other in Starkville, MS in order to meet a rapidly increasing, world-wide customer base.
Machine R&D and Process Development
The engineers, technicians, and scientists of the II-VI engage in diverse materials research and development as well as materials production process development. These activities support the II-VI family of products to improve existing material production and develop production methods for emerging materials and often involve a synergistic blend of Material Sciences, Process Automation, Process Equipment Design, Technology Transfer, and Computer Modeling. With an average experience level of over 15 years per member, the staff of the II-VI is capable of efficiently transferring new material processes from laboratory scale to pilot scale to full scale production operation.
The physics of many II-VI materials production processes is often not easy to directly observe or measure. In some cases, computer models of thermal or electromagnetic fields are required to understand the underlying physical processes. With these models in support of experimental discovery, II-VI scientists and engineers are capable of developing process equipment and methods with increasing confidence that the desired process “window” can be quickly achieved and maintained.
Process Equipment Design
Much of the II-VI material process production equipment is designed and build in house. The core experience in this area is multidisciplinary with a strong electrical and mechanical engineering emphasis. Concomitant with Process Automation, and the material sciences process equipment design is one of the main outputs of the II-VI. Typical design development involves a mix of iterative analysis and prototyping to converge to an optimum design. II-VI has over 100 years of experience to draw upon in this endeavor. As a result the application of best practices and reusable design is common. II-VI typically ‘test pilots” new designs, operates them in a full production mode and generates the necessary engineering documentation to replicate and support the production scale-up of an emerging material process.
Using the latest software and computer hardware techniques and systems, the II-VI develops control equipment and architectures to automate material production and test processes in all stages of the development life cycle – from laboratory to production scale processes. These systems use conventional and proprietary sensing and actuation technologies, rapid prototyping, and reusable/modular software and hardware components. Common objectives of the resulting systems include robust data acquisition, SPC, intuitive operator interfaces, programmable recipe sequences, high reliability, and high process repeatability. The best automation engineering practices are continually developed and deployed companywide.
In II-VI’s supporting role, the transfer of production equipment and processes for emerging materials from pilot scale to full-scale production is an important activity for commercialization. Technology transfer involves many facets, often including the creation of process equipment, software, process recipes, work instructions, quality and production control procedures, user/maintenance documentation, and calibration procedures. In the longer term II-VI supports the technology transfer via technical support and process equipment upgrades.
Research & Development
II-VI Advanced Materials SiC Devision carries out extensive Research & Development in the field of SiC and other wide bandgap materials utilizing unique, state of the art technology and the latest manufacturing techniques. WBG written publications and presentations include:
- T. Anderson et al, “Advanced PVT Growth of 2 & 3 Inch Diameter 6H SiC Crystals”, Mat. Sci. Forum, Vol. 457-460 (2004), pp. 75-78
- M. Yoganathan et al, “Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport”, Mat. Res. Soc. Symp. Proc. Vol. 815 (2004) J5.9.1
- A. Gupta et al, “6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT)”, Mat. Res. Soc. Symp. Proc. Vol. 815 (2004) J5.24
- I. Zwieback et al, “Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport”, ECSCRM 2004 Conference Proceedings (Bologna, Italy), To Be Published
- T. Anderson et al, “Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals”, ECSCRM 2004 Conference Proceedings (Bologna, Italy), To Be Published
- C. Martin et al, “Sub-Surface Damage Removal in Fabrication & Polishing of Silicon Carbide”, Compound Semiconductor MANTECH Conference Proceedings, May, 2004, pp. 291-294
- E. Emorhokpor, et al, “Characterization and Mapping of Crystal Defects in Silicon Carbide”, Compound Semiconductor MANTECH Conference Proceedings, May, 2004, pp. 139-142