FPD7612P70 – Low-Noise High-Frequency Packaged pHEMT
The FPD7612P70 is a low- parasitic, surface- mountable- packaged depletion- mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimized for low- noise, high- frequency applications.
Key Characteristics
- 22 dBm Output Power (P1dB)
- 21 dB Gain at 1.85 GHz
- 5 dB Noise Figure at 1.85 GHz
- 30 dB Output IP3 at 1.85 GHz
- 45% Power-Added Efficiency at 1.85 GHz
- Usable Gain to 24 GHz
Applications
- Gain blocks and medium- power stages
- WiMax (2 GHz to 11 GHz)
- WLAN 802.11a (5.8 GHz)
- Point-to-Point Radio (to 18 GHz)