FPD750 – 0.5 W Power pHEMT
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 μm x 750 μm Schottky barrier gate that is defined by high–resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
Key Characteristics
- 5 dBm Linear Output Power at 12 GHz
- 5 dB Power Gain at 12 GHz
- 5 dB Max Stable Gain at 12 GHz
- 38 dBm OIP3
- 50% Power-Added Efficiency
Applications
- Narrowband and Broadband High-Performance Amplifiers
- SATCOM Uplink Transmitters
- PCS/Cellular Low-Voltage High-Efficiency Output Amplifiers
- Medium-Haul Digital Radio Transmitters