850nm 14Gb/s GaAs Photodiode Dual Top Contact Single Chip and Array

II-VI high speed 850nm PIN Photodiode is designed to meet stringent specifications for high speed data communications. The high performance, high reliability device is engineered with low electrical parasitics for data rates up to 14Gb/s.

Applications

• Parallel fiber optical communication links
• AOC and Transceivers

Features

• High responsivity
• Low operating voltage
• Low capacitance
• Low dark current
• Data rates up to 14 Gb/s
• Topside anode & cathode configuration
• Available as 1, 4 (photo) and 12 channel array chip
• Halogen & RoHS compliant

II-VI’s EpiDetector™ InGaAs photodetector wafers combine performance with quick-lot data for better yield and quality. Grown by
MOCVD, II-VI’s InGaAs wafers surpass industry standards, bringing next generation technology to your application.

 Advanced Photodetector Structures

II-VI has InGaAsP capability for advanced photodetector structures, and state-of-the-art 100 mm capability to fit your needs. Our expertise in both materials and devices results in the high-quality, high-yield products you expect and the advanced technology you need.

 Applications

• 50, 75, 100 mm
• InP/InGaAs/InGaAsP
• Photodetector devices
• MOCVD production
• Telecommunications applications

Features and performance

• Typical i-layer background concentration <5e14, measured by polaron
• Quick-lot diode fab and characterization available
• Low dark current - Typical leakage currents less than 1nA at –5 volts
• InGaAsP capability for advanced structures