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InGaP/GaAs HBT Wafers

Designed specifically for today’s CDMA and GSM wireless devices and OC-192 networking applications, Epiworks’ InGaP/GaAs heterojunction bipolar transistors (HBT) deliver the performance and reliability you demand. Manufactured on an Aixtron MOCVD production platform, EpiHBT™ wafers set a new standard for quality, performance, and yield

Specifiacations

  • 100 and 150 mm
  • InGaP/GaAs
  • MOCVD production
  • Power amplifier and digital applications

Features and Performance

  • InGaP emitter
  • Carbon doped up to 4E19 cm-3
  • Full-wafer fab enables
    - high-level quality assurance
    - rapid improvement of HBT processes
    - high uniformity
  • Quick-lot data for improved yield and quality

 

InGaP/GaAs HBT Wafers
Designed specifically for today’s CDMA and GSM wireless devices and OC-192 networking applications, Epiworks’ InGaP/GaAs heterojunction bipolar transistors (HBT) deliver the performance and reliability you demand. Manufactured on an Aixtron MO... Read More
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