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InGaAs Photodetector Wafers

II-VI’s EpiDetector™ InGaAs photodetector wafers combine performance with quick-lot data for better yield and quality. Grown by
MOCVD, II-VI’s InGaAs wafers surpass industry standards, bringing next generation technology to your application.

 Advanced Photodetector Structures

II-VI has InGaAsP capability for advanced photodetector structures, and state-of-the-art 100 mm capability to fit your needs. Our expertise in both materials and devices results in the high-quality, high-yield products you expect and the advanced technology you need.

 Applications

  • 50, 75, 100 mm
  • InP/InGaAs/InGaAsP
  • Photodetector devices
  • MOCVD production
  • Telecommunications applications

Features and performance

  • Typical i-layer background concentration <5e14, measured by polaron
  • Quick-lot diode fab and characterization available
  • Low dark current - Typical leakage currents less than 1nA at –5 volts
  • InGaAsP capability for advanced structures
InGaAs Photodetector Wafers
II-VI’s EpiDetector™ InGaAs photodetector wafers combine performance with quick-lot data for better yield and quality. Grown by MOCVD, II-VI’s InGaAs wafers surpass industry standards, bringing next generation technology to your appli... Read More
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