II‐VI Incorporated (Nasdaq: IIVI), a leader in compound semiconductors, today announced that it has won the Best Strategic Partner Award from Dynax Semiconductor as their supplier of silicon carbide substrates for wireless RF devices.
Dr. Naiqian Zhang, founder and CEO of Dynax Semiconductor, presented II-VI with the award for its outstanding supplier performance in quality, delivery, and service. II-VI supplies Dynax Semiconductor with semi-insulating silicon carbide (SiC) substrates that enable gallium nitride-on-silicon carbide (GaN-on-SiC) RF power amplifiers deployed in 4G and 5G wireless base stations.
“We are proud to receive this award and to support Dynax Semiconductor as the demand for GaN-on-SiC power amplifiers is increasing rapidly,” said Dr. Gary Ruland, Vice President, Wide Bandgap Semiconductors Business Unit. “II-VI continues to receive prestigious supplier and industry awards in China, demonstrating our strategic relationship with our customers in that region.”
Semi-insulating SiC substrates enable RF power amplifiers for next-generation wireless networks operating over a wide frequency spectrum in the gigahertz range, including in the millimeter-wave bands. II-VI is a leading supplier of SiC substrates, with a strong technology portfolio of 30 active patents and with highly differentiated and proprietary manufacturing platforms and technologies including crystal growth, substrate fabrication, and polishing.