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28 GBaud DFB Laser Diode Chip
  • Designed for 28 Gb/s NRZ or 56 Gb/s PAM4
  • Operating temperature -20 °C to 85 °C
  • Qualified for non-hermetic packaging
  • Available wavelengths: CWDM and LAN-WDM
Monitor Photodiode
  • The 80μm Monitor Photodiode (MPD) is an InP, bare chip
    This process technology offers leading-edge performance optimized for photo current sensing.
  • Bare Die, 0.25 mm x 0.25 mm x 0.15 mm
  • 100 % RoHS Compliant
Top Illuminated Large Area Monitor Photodiode Chip
  • Top illuminated monitor photodiode with 500 μm diameter active area
  • Extremely low dark current with high reliability
  • Response to 1270-1620 nm with typical responsivity of 1 A/W
  • RoHS compliant
10 Gb/s DFB Laser Diode Chip

Features

  • Designed for 10 Gb/s
  • Operating temperature -40 °C to 85 °C

Available Wavelengths

  • CWDM 1270 nm to 1330 nm
10 Gb/s FP Laser Diode Chip

Features

  • Designed for 10 Gb/s
  • Designed for isolator free operation
  • Operating temperature -40 °C to 95 °C
  • 1310 nm wavelength
28 Gb/s FP Laser Diode Chip

Features

  • Designed for 28 Gb/s
  • Designed for isolator free operation
  • Operating temperature -40 °C to 95 °C
  • 1310 nm
28 GBaud DFB Laser Diode Chip
Designed for 28 Gb/s NRZ or 56 Gb/s PAM4 Operating temperature -20 °C to 85 °C Qualified for non-hermetic packaging Available wavelengths: CWDM and LAN-WDM
Monitor Photodiode
The 80μm Monitor Photodiode (MPD) is an InP, bare chip This process technology offers leading-edge performance optimized for photo current sensing. Bare Die, 0.25 mm x 0.25 mm x 0.15 mm 100 % RoHS Compliant... Read More
Top Illuminated Large Area Monitor Photodiode Chip
Top illuminated monitor photodiode with 500 μm diameter active area Extremely low dark current with high reliability Response to 1270-1620 nm with typical responsivity of 1 A/W RoHS compliant
10 Gb/s DFB Laser Diode Chip
Features Designed for 10 Gb/s Operating temperature -40 °C to 85 °C Available Wavelengths CWDM 1270 nm to 1330 nm
10 Gb/s FP Laser Diode Chip
Features Designed for 10 Gb/s Designed for isolator free operation Operating temperature -40 °C to 95 °C 1310 nm wavelength
28 Gb/s FP Laser Diode Chip
Features Designed for 28 Gb/s Designed for isolator free operation Operating temperature -40 °C to 95 °C 1310 nm
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