Data traffic on 4G wireless networks has increased exponentially over the past few years and is expected to continue to accelerate as networks transition to 5G wireless. To achieve higher bandwidth requirements for 5G wireless, equipment designers are turning to GaN HEMT devices fabricated on SiC substrates (GaN/SiC) due to their superiority over Si-based LDMOS in terms of high breakdown voltage, high current and power density, high power added efficiency (PAE) and gain. GaN/SiC also feature excellent thermal properties and high energy efficiency, which result in higher reliability and the ability to operate over a wider range of temperatures. These combined benefits lower cooling requirements and make systems easier to install. II-VI is a global leader in semi-insulating SiC semiconductor substrates upon which these GaN devices are built. II-VI produces them in large diameters and at scale, enabling our customers to manufacture best-in-class, high reliability GaN/SiC RF power amplifiers.