II-VI Incorporated’s Wide Bandgap Materials Group has received an order worth $1.0 M for 3” SiC substrates from a large domestic customer to be delivered over the next 12 to 15 months. These substrates will support commercialization of GaN-based RF power technology for wireless basestation applications. Use of this technology is anticipated to produce devices for 3G basestation PA’s with significant performance and total cost of operation advantages over silicon LDMOS, which is the current primary technology in use for this application.

“This order reflects the belief that the SiC substrate and materials technology development support offered by II-VI provide the market’s best overall quality and value, and further highlights the partnership strategy we have nurtured with our customers over the past several years”, commented Dr. Thomas Anderson, General Manager of the Wide Band Gap Materials Group. “This validates our view that the market for this leading edge technology is moving forward rapidly and we are excited about the opportunity to support this industry”, added Dr. Anderson.

About II-VI Incorporated’s Wide Bandgap Materials Group
The Wide Bandgap Materials Group (WBG) of II-VI Incorporated’s (Nasdaq: IIVI) Compound Semiconductor Group has the strategic goal to become the leading volume supplier of affordable, high performance wide bandgap semiconductor materials. WBG currently manufactures and markets high quality single crystal silicon carbide (SiC) substrates for use in the wireless infrastructure, RF electronics and power switching industries. WBG has a growing, worldwide customer base and is headquartered in Pine Brook, NJ. Visit the WBG web site at http://www.iiviwbg.com/ and the II-VI Incorporated web site at http://www.ii-vi.com/ for additional information.